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Two-dimensional (2D) transition metal carbides, nitrides and carbonitrides, known as MXenes, are of interest as electrocatalysts. Tungsten-based MXenes are predicted to have low overpotentials in the hydrogen evolution reaction but their synthesis has proven difficult due to the calculated instability of their hypothetical MAX precursors. In this study, we present a theory-guided synthesis of a tungsten-based MXene, W2TiC2Tx, derived from a non-MAX nanolaminated ternary carbide (W,Ti)4C4−y precursor by the selective etching of one of the covalently bonded tungsten layers. Our results indicate the importance of tungsten and titanium ordering, the presence of vacancy defects in the metal layers, and the lack of oxygen impurities in the carbon layers for the successful selective etching of the precursor. We confirm the atomistic out-of-plane ordering of tungsten and titanium using computational and experimental characterizations. The tungsten-rich basal plane endows W2TiC2Tx MXene with a high electrocatalytic hydrogen evolution reaction performance (∼144 mV overpotential at 10 mA cm−2). This study reports a tungsten-based MXene synthesized from a covalently bonded non-MAX precursor, adding to the synthetic strategies for 2D materials. 

F-band substrate-integrated waveguides (SIWs) are designed, fabricated, and characterized on a SiC wafer, along with SIW-based filters, impedance standards, and transitions to grounded coplanar waveguides (GCPWs). The GCPW-SIW transitions not only facilitate wafer probing, but also double as resonators to form a 3-pole band-pass filter together with an SIW resonator. The resulted filter exhibits a 1.5-dB insertion loss at 115 GHz with a 34-dB return loss and a 19-GHz (16%) 3-dB bandwidth. The size of the filter is only 63% of previous filters comprising three SIW resonators. These results show the feasibility for monolithic integration of highquality filters with high-efficiency antennas and amplifiers in a single-chip RF frontend above 110 GHz, which is particularly advantageous for 6G wireless communications and nextgeneration automobile radars. 

As 6G wireless communications push the operation frequency above 110 GHz, it is critical to have low-loss interconnects that can be accurately tested. To this end, D-band (110 GHz to 170 GHz) substrate-integrated waveguides (SIWs) are designed on a 100-μm-thick SiC substrate. The fabricated SIWs are probed on-wafer in a single sweep from 70 kHz to 220 GHz with their input/output transitioned to grounded coplanar waveguides (GCPWs). From CPW-probed scattering parameters, two-tier calibration is used to de-embed the SIW-GCPW transitions and to extract the intrinsic SIW characteristics. In general, the record low loss measured agrees with that obtained from finite-element full-wave electromagnetic simulation. For example, across the D band, the average insertion loss is approximately 0.2 dB/mm, which is several times better than that of coplanar or microstrip transmission lines fabricated on the same substrate. A 3-pole filter exhibits a 1-dB insertion loss at 135 GHz with 20-dB selectivity and 11% bandwidth, which is order-of-magnitude better than typical on-chip filters. These results underscore the potential of using SIWs to interconnect transistors, filters, antennas, and other circuit elements on the same monolithically integrated chip. 

For millimeter-wave power applications, GaN high-electron mobility transistors (HEMTs) are often grown epitaxially on a high-purity semi-insulating c-axis 4H-SiC substrate. For these anisotropic hexagonal materials, the design and modeling of microstrip and coplanar interconnects require detailed knowledge of both the ordinary permittivity ε⊥ and the extraordinary permittivity εǁ perpendicular and parallel, respectively, to the c-axis. However, conventional dielectric characterization techniques make it difficult to measure εǁ alone or to separate εǁ from ε⊥. As a result, there is little data for εǁ, especially at millimeter-wave frequencies. This work demonstrates techniques for characterizing εǁ of 4H SiC using substrate-integrated waveguides (SIWs) or SIW resonators. The measured εǁ on seven SIWs and eleven resonators from 110 to 170 GHz is within ±1% of 10.2. Because the SIWs and resonators can be fabricated on the same SiC substrate together with HEMTs and other devices, they can be conveniently measured on-wafer for precise material-device correlation. Such permittivity characterization techniques can be extended to other frequencies, materials, and orientations. 

Two-dimensional transition metal carbides, nitrides, and carbonitrides, known as MXenes, hold potential in electrocatalytic applications. Tungsten (W) based-MXenes are of particular interest as they are predicted to have low overpotentials in hydrogen evolution reaction (HER). However, incorporating W into the MXene structure has proven difficult due to the calculated instability of its hypothetical MAX precursors. In this study, we present a theory-guided synthesis of a W-containing MXene, W2TiC2Tx, derived from a non-MAX nanolaminated ternary carbide (W,Ti)4C4-y precursor by selective etching of one of the covalently bonded tungsten layers. Our results indicate the importance of W and Ti ordering and the presence of vacancy defects for the successful selective etching of the precursor. We confirm the atomistic out-of-plane ordering of W and Ti using density functional theory, Rietveld refinement, and electron microscopy methods. Additionally, the W-rich basal plane endows W2TiC2Tx MXene with a remarkable HER overpotential (~144 mV at 10 mA/cm2). This study adds a tungsten-containing MXene made from a covalently bonded non-MAX phase opening more ways to synthesize novel 2D materials. 

Currently, lacking suitable test structures, little data exist for the permittivity of hexagonal materials such as GaN and SiC at millimeter-wave frequencies, especially for the extraordinary permittivity ε || as opposed to the ordinary permittivity ε ⊥ . This paper demonstrates for the first time that it is possible to characterize ε || of c-axis 4H SiC using on-wafer measurements of substrate-integrated-waveguide resonators. In fact, measurements on eleven resonators yield a relative ε || of 10.27 ± 0.03 and a loss tangent tanδ<0.02 over the D band (110-170 GHz). The on-wafer measurements of resonators and other devices fabricated on the same SiC substrate can allow material property to be closely correlated with device performance. The present approach can be extended to materials of other types and orientations. 

A D-band (110‒170 GHz) SiC substrate-integrated waveguide (SIW) is characterized on-wafer by two different vector network analyzers (VNAs): a 220-GHz single-sweep VNA and an 110-GHz VNA with WR8 (90‒140 GHz) and WR5 (140‒220 GHz) frequency extenders. To facilitate probing, the SIW input and output are transitioned to grounded coplanar waveguides (GCPWs). Two-tier calibration is used to de-embed the SIWGCPW transitions as well as to extract the intrinsic SIW characteristics. In general, the two VNAs are in agreement and both result in an ultra-low insertion loss of approximately 0.2 dB/mm for the same SIW, despite stitching errors at band edges. 

A lithium-air battery based on lithium oxide (Li₂O) formation can theoretically deliver an energy density that is comparable to that of gasoline. Lithium oxide formation involves a four-electron reaction that is more difficult to achieve than the one- and two-electron reaction processes that result in lithium superoxide (LiO₂) and lithium peroxide (Li₂O₂), respectively. By using a composite polymer electrolyte based on Li₁₀GeP₂S₁₂nanoparticles embedded in a modified polyethylene oxide polymer matrix, we found that Li₂O is the main product in a room temperature solid-state lithium-air battery. The battery is rechargeable for 1000 cycles with a low polarization gap and can operate at high rates. The four-electron reaction is enabled by a mixed ion–electron-conducting discharge product and its interface with air.